View BLU3012_235589.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
BLU30/12 UHF power transistor
Product specification January 1985
Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES: * multi-base structure and emitter-ballasting resistors for an optimum temperature profile * gold metallization ensures excellent reliability * internal matching to achieve an optimum wideband capability and high power gain
BLU30/12
The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange.
QUICK REFERENCE DATA Envelope Mode of operation Collector-emitter voltage (d.c.) Frequency Load power Power gain Collector efficiency Heatsink temperature PIN CONFIGURATION PINNING PIN 1
handbook, halfpage
SOT-119 class-B; c.w. VCE f PL GP C Th > > 12,5 V 470 MHz 30 W 6,0 dB 55 % 25 C
DESCRIPTION emitter emitter base collector emitter emitter
1
2
2 3 4 5 6
3
4
5
6
MSB006
Fig.1 Simplified outline, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
January 1985
2
Philips Semiconductors
Product specification
UHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation f > 1 MHz; Tmb = 25 C Storage temperature Operating junction temperature Ptot (r.f.) Tstg Tj max. max. IC ICM max. max. VCBOM VCEO VEBO max. max. max.
BLU30/12
36 V 16,5 V 4V 6A 18 A 65 W 200 C
-65 to + 150 C
handbook, halfpage
10
MDA324
handbook, halfpage
100 Ptot
MDA325
IC (A) Th = 70 C
Tmb = 25 C
(W) 80
60 1 40 II I
20
10-1
1
10
VCE (V)
102
0 0 40 80 120 Th (C) 160
I Continuous operation (f > 1 MHz) II Short-time operation during mismatch; (f > 1 MHz.
Fig.2 D.C. SOAR. Rth mb-h = 0,2 K/W
Fig.3 Power/temperature derating curves
THERMAL RESISTANCE (dissipation = 45 W; Tmb = 25 C) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(r.f.) Rth mb-h max. max. 2,45 K/W 0,2 K/W
January 1985
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-base breakdown voltage IC = 50 mA; open emitter Collector-emitter breakdown voltage IC = 100 mA; open base Emitter-base breakdown voltage IE = 10 mA; open collector Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 D.C. current gain IC = 4 A; VCE = 10 V Collector capacitance at f = 1 MHz(1) IE = ie = 0; VCB = 12,5 V Feed-back capacitance at f = 1 IC = 0; VCE = 12,5 V Collector-flange capacitance Note 1. Device mounted in SOT-119 envelope without inputmatching. MHz(1) Cre Ccf typ. typ. Cc typ. hFE > typ. ESBR > ICES < V(BR)EBO > V(BR)CEO > V(BR)CBO >
BLU30/12
36 V 16,5 V 4V 22 mA 8 mJ 15 60 85 pF 52 pF 3 pF
handbook, halfpage
80
MDA326
handbook, halfpage
hFE 60
VCE = 12.5 V 10 V
250 Cc
MDA327
(pF) 210
170 40 130 20 90
0 0 4 8 12 IC (A) 16
50 0 4 8 12 16 20 VCB (V)
Fig.4 Tj = 25 C; typ. values.
Fig.5 IE = ie = 0; f = 1 MHz; typ. values.
January 1985
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION Mode of operation Collector-emitter voltage (d.c.) Frequency Load power Power gain Collector efficiency Heatsink temperature
BLU30/12
In narrow-band test circuit; class-B; c.w. VCE f PL Gp C Th > typ. > typ. 12,5 V 470 MHz 30 W 6,0 dB 7,4 dB 55 % 66 % 25 C
handbook, full pagewidth
L6 C1 50 C2 C3 L2 C4 R2 R1 L3 L5
MDA328
C8 50
L1
T.U.T. L4 C6 C7
C5
+VCC
Fig.6 Class-B test circuit at f = 470 MHz.
List of components: C1 = C2 = C7 = C8 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) C3 = C6 = 3,9 pF ceramic capacitor (500 V) C4 = 100 pF feed-through capacitor C5 = 100 nF polyester film capacitor L1 = stripline (24,0 mm x 6,7 mm) L2 = 10 turns closely wound enamelled Cu-wire (0,4 mm); int. diam. 4 mm L3 = 2 turns enamelled Cu-wire (0,6 mm); Ferroxcube tube core, grade 3B5 (cat. no. 4313 020 15170) L4 = 12,6 nH; 2,5 turns enamelled Cu-wire (0,7 mm); int. diam. 4 mm; length 3 mm; leads 2 x 5 mm L5 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) L6 = stripline (28,4 mm x 6,7 mm) R1 = R2 = 10 carbon resistor L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (r = 2,74); thickness 116 inch. Component lay-out and printed-circuit board for 470 MHz test circuit are shown in Figs 7 and 8.
January 1985
5
Philips Semiconductors
Product specification
UHF power transistor
BLU30/12
handbook, full pagewidth
104 mm
01565 MJK UHF PWR AMP
56.5 mm (1) (1)
(1)
(1)
Fig.7 P.c. board for 470 MHz, class-B test circuit.
01565 MJK UHF PWR AMP L5 R1 L3 C4
+VCC
C1
R2 L2 L4 C8
C5
C3 L1 C2 L6 C7
C6
MDA329
(1)
double Cu-clad printed-circuit board Cu strap (thick 0.3 mm; wide 5.0 mm)
The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side fully metallized serving as groundplane. Earth connections are made by hollow rivets and also by copper straps under the emitter to provide a direct contact between the copper on the component side and the ground plane.
Fig.8 Component lay-out of 470 MHz, class-B test circuit.
January 1985
6
Philips Semiconductors
Product specification
UHF power transistor
BLU30/12
handbook, halfpage
50 PL
MDA330
handbook, halfpage
(W) 40
Th = 25 C 70 C
10 Gp
MDA331
150 C (%) 125
(dB) 8 Gp
30
6
100
20
4
75
10
2
C
50
0 0 4 8 12 16 PS (W) 20
0 0 10 20 30 40 PL (W) Th = 25 C; - - - Th = 70 C. VCE = 12,5 V; f = 470 MHz; class-B operation; Th = 25 C and 70 C; Rth mb-h = 0,2 K/W; typical values. 50
25
VCE = 12,5 V; f = 470 MHz; class-B operation; Th = 25 C and 70 C; Rth mb-h = 0,2 K/W; typical values.
Fig.9
Load power vs. source power.
Fig.10 Power and gain and efficiency vs. load power.
RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) up to 38 W under the following conditions: VCE = 15,5 V; f = 470 MHz; Th = 25 C; Rth mb-h = 0,2 K/W.
January 1985
7
Philips Semiconductors
Product specification
UHF power transistor
BLU30/12
handbook, halfpage
3
MDA332
handbook, halfpage
3
MDA333
Zi () 2
xi
ZL ()
RL 2
1 ri 0
1
-1
-2 -3 400
XL
0 400
430
460
490
f (MHz)
520
430
460
490
f (MHz)
520
VCE = 12,5 V; PL = 30 W; f = 400-512 MHz; Th = 25 C; class-B operation; Rth mb-h = 0,2 K/W; typical values.
VCE = 12,5 V; PL = 30 W; f = 400-512 MHz; Th = 25 C; class-B operation; Rth mb-h = 0,2 K/W; typical values.
Fig.11 Input impedance (series components).
Fig.12 Load impedance (series components).
handbook, halfpage
10 Gp 8
MDA334
(dB)
6
4
2
0 400
430
460
490
f (MHz)
520
VCE = 12,5 V; PL = 30 W; f = 400-512 MHz; Th = 25 C; class-B operation; Rth mb-h = 0,2 K/W; typical values.
Fig.13 Power gain versus frequency.
January 1985
8
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLU30/12
SOT119A
A F q
C
U1 H1 b2
B w2 M C c
2
4
6
H
U2
p
D1 w1 M A B
U3
D
A
1
b1
3
b e
5
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.39 6.32 b 5.59 5.33 b1 5.34 5.08 b2 4.07 3.81 c D D1 e F H H1 p Q q U1 U2 U3 w1 w2 1.02 0.04 w3 0.26 0.01
0.18 12.86 12.83 6.48 0.07 12.59 12.57
2.54 22.10 18.55 3.31 2.28 21.08 18.28 2.97
4.58 25.23 6.48 12.76 18.42 0.51 3.98 23.95 6.07 12.06
0.291 0.220 0.210 0.160 0.007 0.505 0.505 0.100 0.870 0.730 0.130 0.180 0.993 0.255 0.502 0.725 0.02 0.255 0.249 0.210 0.200 0.150 0.003 0.496 0.495 0.090 0.830 0.720 0.117 0.157 0.943 0.239 0.475
OUTLINE VERSION SOT119A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
January 1985
9
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLU30/12
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
January 1985
10

▲Up To Search▲

Price & Availability of BLU3012

	To Download BLU3012 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .